Research in Electronic and Optoelectronic Materials and Devices

Investigation of charge carrier processes in semiconductor materials and  device, specifically carrier capture, escape and recombination in semiconductor lasers. The studies center around understanding the temperature dependence of the threshold current in long wavelength and optimization of laser materials and structure design.

• A. A. Dikshit and J. M. Pikal, “The role of free carriers and excitons on the lasing characteristics of InAs/InGaAs quantum dot lasers,” submitted to Applied Physics Letters, manuscript #L03-0018.

• A. A. Dikshit and J. M. Pikal, “Effect of free carriers and excitons on the temperature characteristics of InAs/InGaAs quantum dot lasers,” submitted to the Conference on Lasers and Electro-Optics to be held in Baltimore MD, June 2003.

• J. M. Pikal, “Quantum Dots Active Regions for Semiconductor Lasers,” Invited presentation given at the Workshop on Molecular wires and devices, Laramie WY, July 28 – August 2, 2002.

• C. S. Menoni, O. Anton, D. Patel, G. Vaschenko, G. Y. Robinson, and J. M. Pikal, “Improvement in the frequency response of 1.3 um buried heterostructure InAsP lasers,” (Invited), SPIE Proc. On Ultrafast Phenomena in Semiconductors VI, Vol. 4643, pp. 181-185, 2002.
  
  
• O. Anton, G. Vaschenko, D. Patel, J. M. Pikal, and C. S. Menoni, “Small Signal Frequency Response of Laser Diodes Obtained with a Femtosecond frequency Comb,” Proc. SPIE Vol. 4871, pp. 95-102, 2002.

• A. A. Dikshit and J. M. Pikal, “Effect of excited state transitions and Auger recombination on the T0 of InAs/InGaAs quantum dot lasers,” in OSA Trends in Optics and Photonics (TOPS) Vol. 73, Conference on Lasers and Electro-Optics, OSA Technical Digest, Postconference Edition (Optical Society of America, Washington DC, 2002), pp. 547-548.

• O. Anton, G. Vaschenko, D. Patel, G.Y. Robinson, C. S. Menoni, and J. M. Pikal, “Femtosecond optical modulation measurements of the 3 dB bandwidth of 1.3 um InAsP lasers,” in OSA Trends in Optics and Photonics (TOPS) Vol. 73, Conference on Lasers and Electro-Optics, OSA Technical Digest, Postconference Edition (Optical Society of America, Washington DC, 2002), pp. 540-541.

• O. Anton, D. Patel, G. Vaschenko, G. Y. Robinson, J. Pikal, and C. S. Menoni, “Analysis of the modulation response of 1.3 um strained InAsP lasers,” in Semiconductor Lasers for Lightwave Communications Systems, Carmen S. Menoni, Richard P. Mirin, Editors, Proc. of SPIE Vol. 4533, pp. 82-90 (2001).

• R. Slaby, G. Vaschenko, C. S. Menoni, G. Y. Robinson, J. M. Pikal, and C. M. Sotomayor Torres, “Carrier Capture in 1.3 um InAsP/InGaAsP quantum well laser structures,” in Conference on Lasers and Electro-Optics, OSA Technical Digest, (Optical Society of America, Washington DC, 2000), pp. 176.

• G. Vaschenko, R. Slaby, C. S. Menoni, G. Y. Robinson, J. M. Pikal,  and C. M. Sotomayor Torres, "Carrier Capture in InAsP/InGaAsP quantum well  structures," Bulletin American Physical Society, Vol. 45, No. 1, pp. 293, Minneapolis, MN. 2000.

• O. Anton, S. Piper, G. Vaschenko, C.S. Menoni, and J. M. Pikal, “Understanding the influence of carrier transport processes in the high frequency response of 1.3um InAsP lasers,” Presented at the American Physical Society – Four Corners Meeting, Fort Collins, CO. 2000.
  

• J. M. Pikal, C. S. Menoni, P. Thiagarajan, G. Y. Robinson and H. Temkin,  "Temperature Dependence of Intrinsic Recombination Coefficients in 1.3 um  InAsP/InP Quantum Well Semiconductor Lasers," Appl. Phys. Lett., Vol. 76, No. 19, pp. 2659-2661, 2000

• D. Patel, J. M. Pikal, L. Miao, C. S. Menoni, K.J. Thomas, F.A.  Kish, and M.R. Hueschen, "Effect of Band Structure Modification on the Output Characteristics of AlGaInP Light Emitting Diodes," Appl. Phys. Lett., Vol. 75, No. 20, pp. 3201-3203, 1999

• J. M. Pikal, C. S. Menoni, H. Temkin, P. Thiagarajan, and G. Y. Robinson, "Carrier Lifetime and Recombination in Long Wavelength Quantum Well Lasers," IEEE Journal of Selected Topics in Quantum Electronics, Vol. 5, No. 3, pp. 613-619, 1999

• J. M. Pikal, C. S. Menoni, H. Temkin, P. Thiagarajan, and G. Y. Robinson, "Intrinsic Recombination Coefficients in Quantum Well Semiconductor Lasers," Proceedings for the Lasers and Electro-Optics Society Annual Meeting, Vol. 2, pp. 661-662, San Francisco, CA. 1999.

• D. Patel, J.M. Pikal, L. Miao, C.S. Menoni, K.J. Thomas, F.A. Kish, M.R. Hueschen, "Effect of band-structure Modification on the Output Characteristics of AlGaInP Light-Emitting Diodes," in Conference on Lasers and Electro-Optics, OSA Technical Digest, (Optical Society of America, Washington DC, 1999), pp. 146-147.

• D. Patel, J. Pikal, Linshi Miao, C. S. Menoni, K. J. Thomas, F. A. Kish, M. R. Hueschen, "Effect of Electronic Structure Changes on the Output of AlGaInP Light Emitting Diodes," Bulletin of the American Physical Society Centennial Meeting, Vol. 44, No. 1, pp. 210, Atlanta, GA. 1999

• J. M. Pikal, C. S. Menoni, H. Temkin, P. Thiagarajan, and G. Y. Robinson, "Impedance Independent Optical Carrier Lifetime Measurements in Semiconductor Lasers," Review of Scientific Instruments, Vol. 69, No. 12, pp. 4247-4248, 1998

• Gregory J. Fetzer, Linshi Miao, Juan L.A. Chilla, Jon M. Pikal, and Carmen Menoni, "NO2 photometer based on solid state light sources," Appl. Opt., Vol. 37, No. 24, pp. 5590-5595, 1998

• D. Patel, J. M. Pikal, and C. S. Menoni, "Effect of Band Structure Modification on the Internal Losses of 1.3um InGaAsP Lasers," Proceedings for the Conference on Lasers and Electro-Optics, pp. 237-238, San Francisco, CA. 1998

• C. S. Menoni, D. Patel, J. M. Pikal, "Variation in the Internal Loss of1.3 um InGaAsP Lasers with Hydrostatic Pressure and their Impact on the Laser Output," Bulletin of the Annual Meeting of the American Physical Society, Vol. 43, No. 1, pp. 648, Los Angeles, CA. 1998

• Jon M. Pikal, Carmen S. Menoni, H. Temkin, P. Thiagarajan, and G. Y. Robinson, "Laser Impedance Independent Optical Carrier Lifetime Measurements," in Proceedings for the Lasers and Electro-Optics Society Annual Meeting, pp. 140-141, San Francisco, CA. 1997

• J. M. Pikal, P. Thiagarajan, C. S. Menoni, G. Y. Robinson, H. Temkin, "Carrier Lifetimes and Gain in 1.3 um Strained InAsP/InGaAsP Multiple-Quantum-Well Lasers," in Conference on Lasers and Electro-Optics, Vol. 11, 1997 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1997) pp. 158-159.

• A. A. Bernussi, J. Pikal, H. Temkin, D. L. Coblentz, and R. A. Logan,  "Rate Equation Model of High-Temperature Performance of InGaAsP Quantum Well  Lasers," Appl. Phys. Lett., Vol. 66, No. 26, pp. 3606-3608, June 1995